裂缝耦合微波等离子体沉积系统(Slot coupled microwave plasma deposition system)

编号 J3
类型 长晶
19357105850
产品详情

该设备为微波等离子化学气相沉积系统(MWCVD)。采用2.45GHz频率微波源,激发稳定的等离子体。电场激发模式为TM021模式,该系统可以稳定生长金刚石单晶材料、多晶晶圆。通过工艺调节,可以稳定生长出 2 英寸到3英寸的金刚石晶圆薄膜。

The device is a microwave plasma chemical vapor deposition system (MWCVD). A 2.45GHz frequency microwave source is used to excite a stable plasma. The electric field excitation mode is TM021 mode, and the system can grow diamond monocrystalline materials and polycrystalline wafers stably. Through process adjustment, 2 inches to 3 inches of adamantine wafer film can be stably grown.

主要应用领域:半导体衬底、热沉片、珠宝、刀具、机械密封、新一代移动通信、智能电网、消费类电子等。

Main application areas: semiconductor substrate, heat sink, jewelry, cutting tools, mechanical seals, new generation mobile communication, smart grid, consumer electronics, etc.