水平双腔布置,硬件成本低于两台单腔外延炉;
Horizontal double cavity arrangement, the hardware cost is lower than two single cavity epitaxial furnace;
双腔工艺和维护独立,实现不停机连续生产;
Dual cavity process and maintenance independent, to achieve continuous production without shutdown;
兼容4/6寸晶圆外延生长,外延层质量优异;
Compatible with 4/6 inch wafer epitaxial growth, excellent epitaxial layer quality;
全自动上下料,释放人工成本;
Automatic loading and unloading, release labor cost;