产品详情
该设备为碳化硅晶体生长设备，采用物理气相传输法(pvt)，具有两个温区，在一定温差范围内相互独立可控。
he equipment is silicon carbide crystal growth equipment, using physical vapor transfer method (pvt), with two temperature zones, in a certain range of temperature differences independently controllable.
籽晶升降系统确保籽晶在晶体生长热场内的生长位置可调。
The seed lifting system ensures that the growth position of the seed is adjustable in the crystal growing heat field.
石墨坩埚旋转系统可以进一步的保证晶体生长热场的均匀性。
The rotating system of graphite crucible can further ensure the uniformity of thermal field of crystal growth.
自动化程度高，可稳定生长8英寸SiC晶体。
High degree of automation, is a stable growth of 8 inch SiC crystal equipment.
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